Discrete Semiconductor Products

Transistors - FETs, MOSFETs - Single

DatasheetImageM-Part NumberManufacturerDescriptionQuantityEst. Market PriceMin. QuantityPackagingSeriesPart StatusFETTypeTechnologyDrainto Source Voltage VdssCurrent Continuous Drain Id25°CDrive Voltage Max Rds On Min Rds OnRds On Max Id VgsVgsth Max IdGate Charge Qg Max VgsVgs MaxInput Capacitance Ciss Max VdsFETFeaturePower Dissipation MaxOperating TemperatureMounting TypeSupplier Device PackagePackage Case
Product Image EPC2036EPCTRANS GAN 100V 1A BUMPED DIE2 500 Minimum: 2 500Tape & Reel (TR) Alternate PackagingeGaN®ActiveN-ChannelGaNFET (Gallium Nitride)100V1A (Ta)5V65 mOhm @ 1A, 5V2.5V @ 600µA0,91nC @ 5V+6V, -4V90pF @ 50V---40°C ~ 150°C (TJ)Surface MountDieDie
Product Image EPC2036EPCTRANS GAN 100V 1A BUMPED DIE1 Minimum: 1Cut Tape (CT) Alternate PackagingeGaN®ActiveN-ChannelGaNFET (Gallium Nitride)100V1A (Ta)5V65 mOhm @ 1A, 5V2.5V @ 600µA0,91nC @ 5V+6V, -4V90pF @ 50V---40°C ~ 150°C (TJ)Surface MountDieDie
Product Image EPC2036EPCTRANS GAN 100V 1A BUMPED DIE-1 Minimum: 1Reel® Alternate PackagingeGaN®ActiveN-ChannelGaNFET (Gallium Nitride)100V1A (Ta)5V65 mOhm @ 1A, 5V2.5V @ 600µA0,91nC @ 5V+6V, -4V90pF @ 50V---40°C ~ 150°C (TJ)Surface MountDieDie
Product Image EPC2035EPCTRANS GAN 60V 1A BUMPED DIE2 500 Minimum: 2 500Tape & Reel (TR) Alternate PackagingeGaN®ActiveN-ChannelGaNFET (Gallium Nitride)60V1A (Ta)5V45 mOhm @ 1A, 5V2.5V @ 800µA1,15nC @ 5V+6V, -4V115pF @ 30V---40°C ~ 150°C (TJ)Surface MountDieDie
Product Image EPC2035EPCTRANS GAN 60V 1A BUMPED DIE1 Minimum: 1Cut Tape (CT) Alternate PackagingeGaN®ActiveN-ChannelGaNFET (Gallium Nitride)60V1A (Ta)5V45 mOhm @ 1A, 5V2.5V @ 800µA1,15nC @ 5V+6V, -4V115pF @ 30V---40°C ~ 150°C (TJ)Surface MountDieDie
Product Image EPC2035EPCTRANS GAN 60V 1A BUMPED DIE-1 Minimum: 1Reel® Alternate PackagingeGaN®ActiveN-ChannelGaNFET (Gallium Nitride)60V1A (Ta)5V45 mOhm @ 1A, 5V2.5V @ 800µA1,15nC @ 5V+6V, -4V115pF @ 30V---40°C ~ 150°C (TJ)Surface MountDieDie
Product Image EPC2038EPCTRANS GAN 100V 2.8OHM BUMPED DIE2 500 Minimum: 2 500Tape & Reel (TR) Alternate PackagingeGaN®ActiveN-ChannelGaNFET (Gallium Nitride)100V500mA (Ta)5V3.3 Ohm @ 50mA, 5V2.5V @ 20µA0,044nC @ 5V+6V, -4V8,4pF @ 50V---40°C ~ 150°C (TJ)Surface MountDieDie
Product Image EPC2038EPCTRANS GAN 100V 2.8OHM BUMPED DIE1 Minimum: 1Cut Tape (CT) Alternate PackagingeGaN®ActiveN-ChannelGaNFET (Gallium Nitride)100V500mA (Ta)5V3.3 Ohm @ 50mA, 5V2.5V @ 20µA0,044nC @ 5V+6V, -4V8,4pF @ 50V---40°C ~ 150°C (TJ)Surface MountDieDie
Product Image EPC2038EPCTRANS GAN 100V 2.8OHM BUMPED DIE-1 Minimum: 1Reel® Alternate PackagingeGaN®ActiveN-ChannelGaNFET (Gallium Nitride)100V500mA (Ta)5V3.3 Ohm @ 50mA, 5V2.5V @ 20µA0,044nC @ 5V+6V, -4V8,4pF @ 50V---40°C ~ 150°C (TJ)Surface MountDieDie
Product Image EPC2040EPCMOSFET NCH 15V 3.4A DIE2 500 Minimum: 2 500Tape & Reel (TR)eGaN®ActiveN-ChannelGaNFET (Gallium Nitride)15V3.4A (Ta)5V30 mOhm @ 1.5A, 5V2.5V @ 1mA0,93nC @ 5V-105pF @ 6V---40°C ~ 150°C (TJ)Surface MountDieDie
Product Image EPC2040EPCMOSFET NCH 15V 3.4A DIE1 Minimum: 1Cut Tape (CT)eGaN®ActiveN-ChannelGaNFET (Gallium Nitride)15V3.4A (Ta)5V30 mOhm @ 1.5A, 5V2.5V @ 1mA0,93nC @ 5V-105pF @ 6V---40°C ~ 150°C (TJ)Surface MountDieDie
Product Image EPC2040EPCMOSFET NCH 15V 3.4A DIE-1 Minimum: 1Reel®eGaN®ActiveN-ChannelGaNFET (Gallium Nitride)15V3.4A (Ta)5V30 mOhm @ 1.5A, 5V2.5V @ 1mA0,93nC @ 5V-105pF @ 6V---40°C ~ 150°C (TJ)Surface MountDieDie
Product Image EPC2037EPCTRANS GAN 100V 550MOHM BUMPED DI2 500 Minimum: 2 500Tape & Reel (TR) Alternate PackagingeGaN®ActiveN-ChannelGaNFET (Gallium Nitride)100V1.7A (Ta)5V550 mOhm @ 100mA, 5V2.5V @ 80µA0,12nC @ 5V+6V, -4V14pF @ 50V---40°C ~ 150°C (TJ)Surface MountDieDie
Product Image EPC2037EPCTRANS GAN 100V 550MOHM BUMPED DI1 Minimum: 1Cut Tape (CT) Alternate PackagingeGaN®ActiveN-ChannelGaNFET (Gallium Nitride)100V1.7A (Ta)5V550 mOhm @ 100mA, 5V2.5V @ 80µA0,12nC @ 5V+6V, -4V14pF @ 50V---40°C ~ 150°C (TJ)Surface MountDieDie
Product Image EPC2037EPCTRANS GAN 100V 550MOHM BUMPED DI-1 Minimum: 1Reel® Alternate PackagingeGaN®ActiveN-ChannelGaNFET (Gallium Nitride)100V1.7A (Ta)5V550 mOhm @ 100mA, 5V2.5V @ 80µA0,12nC @ 5V+6V, -4V14pF @ 50V---40°C ~ 150°C (TJ)Surface MountDieDie
Product Image EPC2014CEPCTRANS GAN 40V 10A BUMPED DIE2 500 Minimum: 2 500Tape & Reel (TR) Alternate PackagingeGaN®ActiveN-ChannelGaNFET (Gallium Nitride)40V10A (Ta)5V16 mOhm @ 10A, 5V2.5V @ 2mA2,5nC @ 5V+6V, -4V300pF @ 20V---40°C ~ 150°C (TJ)Surface MountDie Outline (5-Solder Bar)Die
Product Image EPC2014CEPCTRANS GAN 40V 10A BUMPED DIE1 Minimum: 1Cut Tape (CT) Alternate PackagingeGaN®ActiveN-ChannelGaNFET (Gallium Nitride)40V10A (Ta)5V16 mOhm @ 10A, 5V2.5V @ 2mA2,5nC @ 5V+6V, -4V300pF @ 20V---40°C ~ 150°C (TJ)Surface MountDie Outline (5-Solder Bar)Die
Product Image EPC2014CEPCTRANS GAN 40V 10A BUMPED DIE-1 Minimum: 1Reel® Alternate PackagingeGaN®ActiveN-ChannelGaNFET (Gallium Nitride)40V10A (Ta)5V16 mOhm @ 10A, 5V2.5V @ 2mA2,5nC @ 5V+6V, -4V300pF @ 20V---40°C ~ 150°C (TJ)Surface MountDie Outline (5-Solder Bar)Die
Product Image EPC2039EPCTRANS GAN 80V BUMPED DIE2 500 Minimum: 2 500Tape & Reel (TR) Alternate PackagingeGaN®ActiveN-ChannelGaNFET (Gallium Nitride)80V6.8A (Ta)5V25 mOhm @ 6A, 5V2.5V @ 2mA2,4nC @ 5V+6V, -4V210pF @ 40V---40°C ~ 150°C (TJ)Surface MountDieDie
Product Image EPC2039EPCTRANS GAN 80V BUMPED DIE1 Minimum: 1Cut Tape (CT) Alternate PackagingeGaN®ActiveN-ChannelGaNFET (Gallium Nitride)80V6.8A (Ta)5V25 mOhm @ 6A, 5V2.5V @ 2mA2,4nC @ 5V+6V, -4V210pF @ 40V---40°C ~ 150°C (TJ)Surface MountDieDie
Product Image EPC2039EPCTRANS GAN 80V BUMPED DIE-1 Minimum: 1Reel® Alternate PackagingeGaN®ActiveN-ChannelGaNFET (Gallium Nitride)80V6.8A (Ta)5V25 mOhm @ 6A, 5V2.5V @ 2mA2,4nC @ 5V+6V, -4V210pF @ 40V---40°C ~ 150°C (TJ)Surface MountDieDie
Product Image EPC2007CEPCTRANS GAN 100V 6A BUMPED DIE2 500 Minimum: 2 500Tape & Reel (TR) Alternate PackagingeGaN®ActiveN-ChannelGaNFET (Gallium Nitride)100V6A (Ta)5V30 mOhm @ 6A, 5V2.5V @ 1.2mA2,2nC @ 5V+6V, -4V220pF @ 50V---40°C ~ 150°C (TJ)Surface MountDie Outline (5-Solder Bar)Die
Product Image EPC2007CEPCTRANS GAN 100V 6A BUMPED DIE1 Minimum: 1Cut Tape (CT) Alternate PackagingeGaN®ActiveN-ChannelGaNFET (Gallium Nitride)100V6A (Ta)5V30 mOhm @ 6A, 5V2.5V @ 1.2mA2,2nC @ 5V+6V, -4V220pF @ 50V---40°C ~ 150°C (TJ)Surface MountDie Outline (5-Solder Bar)Die
Product Image EPC2007CEPCTRANS GAN 100V 6A BUMPED DIE-1 Minimum: 1Reel® Alternate PackagingeGaN®ActiveN-ChannelGaNFET (Gallium Nitride)100V6A (Ta)5V30 mOhm @ 6A, 5V2.5V @ 1.2mA2,2nC @ 5V+6V, -4V220pF @ 50V---40°C ~ 150°C (TJ)Surface MountDie Outline (5-Solder Bar)Die
Product Image EPC2016CEPCTRANS GAN 100V 18A BUMPED DIE2 500 Minimum: 2 500Tape & Reel (TR) Alternate PackagingeGaN®ActiveN-ChannelGaNFET (Gallium Nitride)100V18A (Ta)5V16 mOhm @ 11A, 5V2.5V @ 3mA4,5nC @ 5V+6V, -4V420pF @ 50V---40°C ~ 150°C (TJ)Surface MountDieDie
Product Image EPC2016CEPCTRANS GAN 100V 18A BUMPED DIE1 Minimum: 1Cut Tape (CT) Alternate PackagingeGaN®ActiveN-ChannelGaNFET (Gallium Nitride)100V18A (Ta)5V16 mOhm @ 11A, 5V2.5V @ 3mA4,5nC @ 5V+6V, -4V420pF @ 50V---40°C ~ 150°C (TJ)Surface MountDieDie
Product Image EPC2016CEPCTRANS GAN 100V 18A BUMPED DIE-1 Minimum: 1Reel® Alternate PackagingeGaN®ActiveN-ChannelGaNFET (Gallium Nitride)100V18A (Ta)5V16 mOhm @ 11A, 5V2.5V @ 3mA4,5nC @ 5V+6V, -4V420pF @ 50V---40°C ~ 150°C (TJ)Surface MountDieDie
Product Image EPC2012CEPCTRANS GAN 200V 5A BUMPED DIE1 000 Minimum: 1 000Tape & Reel (TR) Alternate PackagingeGaN®ActiveN-ChannelGaNFET (Gallium Nitride)200V5A (Ta)5V100 mOhm @ 3A, 5V2.5V @ 1mA1,3nC @ 5V+6V, -4V140pF @ 100V---40°C ~ 150°C (TJ)Surface MountDie Outline (4-Solder Bar)Die
Product Image EPC2012CEPCTRANS GAN 200V 5A BUMPED DIE1 Minimum: 1Cut Tape (CT) Alternate PackagingeGaN®ActiveN-ChannelGaNFET (Gallium Nitride)200V5A (Ta)5V100 mOhm @ 3A, 5V2.5V @ 1mA1,3nC @ 5V+6V, -4V140pF @ 100V---40°C ~ 150°C (TJ)Surface MountDie Outline (4-Solder Bar)Die
Product Image EPC2012CEPCTRANS GAN 200V 5A BUMPED DIE-1 Minimum: 1Reel® Alternate PackagingeGaN®ActiveN-ChannelGaNFET (Gallium Nitride)200V5A (Ta)5V100 mOhm @ 3A, 5V2.5V @ 1mA1,3nC @ 5V+6V, -4V140pF @ 100V---40°C ~ 150°C (TJ)Surface MountDie Outline (4-Solder Bar)Die
Product Image EPC2019EPCTRANS GAN 200V 8.5A BUMPED DIE1 000 Minimum: 1 000Tape & Reel (TR) Alternate PackagingeGaN®ActiveN-ChannelGaNFET (Gallium Nitride)200V8.5A (Ta)5V50 mOhm @ 7A, 5V2.5V @ 1.5mA2,5nC @ 5V+6V, -4V270pF @ 100V---40°C ~ 150°C (TJ)Surface MountDieDie
Product Image EPC2019EPCTRANS GAN 200V 8.5A BUMPED DIE1 Minimum: 1Cut Tape (CT) Alternate PackagingeGaN®ActiveN-ChannelGaNFET (Gallium Nitride)200V8.5A (Ta)5V50 mOhm @ 7A, 5V2.5V @ 1.5mA2,5nC @ 5V+6V, -4V270pF @ 100V---40°C ~ 150°C (TJ)Surface MountDieDie
Product Image EPC2019EPCTRANS GAN 200V 8.5A BUMPED DIE-1 Minimum: 1Reel® Alternate PackagingeGaN®ActiveN-ChannelGaNFET (Gallium Nitride)200V8.5A (Ta)5V50 mOhm @ 7A, 5V2.5V @ 1.5mA2,5nC @ 5V+6V, -4V270pF @ 100V---40°C ~ 150°C (TJ)Surface MountDieDie
Product Image EPC2001CEPCTRANS GAN 100V 36A BUMPED DIE2 500 Minimum: 2 500Tape & Reel (TR) Alternate PackagingeGaN®ActiveN-ChannelGaNFET (Gallium Nitride)100V36A (Ta)5V7 mOhm @ 25A, 5V2.5V @ 5mA9nC @ 5V+6V, -4V900pF @ 50V---40°C ~ 150°C (TJ)Surface MountDie Outline (11-Solder Bar)Die
Product Image EPC2001CEPCTRANS GAN 100V 36A BUMPED DIE1 Minimum: 1Cut Tape (CT) Alternate PackagingeGaN®ActiveN-ChannelGaNFET (Gallium Nitride)100V36A (Ta)5V7 mOhm @ 25A, 5V2.5V @ 5mA9nC @ 5V+6V, -4V900pF @ 50V---40°C ~ 150°C (TJ)Surface MountDie Outline (11-Solder Bar)Die
Product Image EPC2001CEPCTRANS GAN 100V 36A BUMPED DIE-1 Minimum: 1Reel® Alternate PackagingeGaN®ActiveN-ChannelGaNFET (Gallium Nitride)100V36A (Ta)5V7 mOhm @ 25A, 5V2.5V @ 5mA9nC @ 5V+6V, -4V900pF @ 50V---40°C ~ 150°C (TJ)Surface MountDie Outline (11-Solder Bar)Die
Product Image EPC2015CEPCTRANS GAN 40V 33A BUMPED DIE2 500 Minimum: 2 500Tape & Reel (TR) Alternate PackagingeGaN®ActiveN-ChannelGaNFET (Gallium Nitride)40V53A (Ta)5V4 mOhm @ 33A, 5V2.5V @ 9mA8,7nC @ 5V+6V, -4V980pF @ 20V---40°C ~ 150°C (TJ)Surface MountDieDie
Product Image EPC2015CEPCTRANS GAN 40V 33A BUMPED DIE1 Minimum: 1Cut Tape (CT) Alternate PackagingeGaN®ActiveN-ChannelGaNFET (Gallium Nitride)40V53A (Ta)5V4 mOhm @ 33A, 5V2.5V @ 9mA8,7nC @ 5V+6V, -4V1000pF @ 20V---40°C ~ 150°C (TJ)Surface MountDieDie
Product Image EPC2015CEPCTRANS GAN 40V 33A BUMPED DIE-1 Minimum: 1Reel® Alternate PackagingeGaN®ActiveN-ChannelGaNFET (Gallium Nitride)40V53A (Ta)5V4 mOhm @ 33A, 5V2.5V @ 9mA8,7nC @ 5V+6V, -4V1000pF @ 20V---40°C ~ 150°C (TJ)Surface MountDieDie
Product Image EPC2045ENGRTEPCTRANS GAN 100V BUMPED DIE2 500 Minimum: 2 500Tape & Reel (TR) Alternate PackagingeGaN®ActiveN-ChannelGaNFET (Gallium Nitride)100V16A (Ta)5V7 mOhm @ 16A, 5V2.5V @ 5mA6,5nC @ 5V+6V, -4V685pF @ 50V---40°C ~ 150°C (TJ)Surface MountDieDie
Product Image EPC2045ENGRTEPCTRANS GAN 100V BUMPED DIE1 Minimum: 1Cut Tape (CT) Alternate PackagingeGaN®ActiveN-ChannelGaNFET (Gallium Nitride)100V16A (Ta)5V7 mOhm @ 16A, 5V2.5V @ 5mA6,5nC @ 5V+6V, -4V685pF @ 50V---40°C ~ 150°C (TJ)Surface MountDieDie
Product Image EPC2045ENGRTEPCTRANS GAN 100V BUMPED DIE-1 Minimum: 1Reel® Alternate PackagingeGaN®ActiveN-ChannelGaNFET (Gallium Nitride)100V16A (Ta)5V7 mOhm @ 16A, 5V2.5V @ 5mA6,5nC @ 5V+6V, -4V685pF @ 50V---40°C ~ 150°C (TJ)Surface MountDieDie
Product Image EPC2049ENGRTEPCTRANS GAN 40V BUMPED DIE500 Minimum: 500Tape & Reel (TR) Alternate PackagingeGaN®ActiveN-ChannelGaNFET (Gallium Nitride)40V16A (Ta)5V5 mOhm @ 15A, 5V2.5V @ 6mA7,6nC @ 5V+6V, -4V805pF @ 20V---40°C ~ 150°C (TJ)Surface MountDieDie
Product Image EPC2049ENGRTEPCTRANS GAN 40V BUMPED DIE1 Minimum: 1Cut Tape (CT) Alternate PackagingeGaN®ActiveN-ChannelGaNFET (Gallium Nitride)40V16A (Ta)5V5 mOhm @ 15A, 5V2.5V @ 6mA7,6nC @ 5V+6V, -4V805pF @ 20V---40°C ~ 150°C (TJ)Surface MountDieDie
Product Image EPC2049ENGRTEPCTRANS GAN 40V BUMPED DIE-1 Minimum: 1Reel® Alternate PackagingeGaN®ActiveN-ChannelGaNFET (Gallium Nitride)40V16A (Ta)5V5 mOhm @ 15A, 5V2.5V @ 6mA7,6nC @ 5V+6V, -4V805pF @ 20V---40°C ~ 150°C (TJ)Surface MountDieDie
Product Image EPC2010CEPCTRANS GAN 200V 22A BUMPED DIE500 Minimum: 500Tape & Reel (TR) Alternate PackagingeGaN®ActiveN-ChannelGaNFET (Gallium Nitride)200V22A (Ta)5V25 mOhm @ 12A, 5V2.5V @ 3mA5,3nC @ 5V+6V, -4V540pF @ 100V---40°C ~ 150°C (TJ)Surface MountDie Outline (7-Solder Bar)Die
Product Image EPC2010CEPCTRANS GAN 200V 22A BUMPED DIE1 Minimum: 1Cut Tape (CT) Alternate PackagingeGaN®ActiveN-ChannelGaNFET (Gallium Nitride)200V22A (Ta)5V25 mOhm @ 12A, 5V2.5V @ 3mA5,3nC @ 5V+6V, -4V540pF @ 100V---40°C ~ 150°C (TJ)Surface MountDie Outline (7-Solder Bar)Die
Product Image EPC2010CEPCTRANS GAN 200V 22A BUMPED DIE-1 Minimum: 1Reel® Alternate PackagingeGaN®ActiveN-ChannelGaNFET (Gallium Nitride)200V22A (Ta)5V25 mOhm @ 12A, 5V2.5V @ 3mA5,3nC @ 5V+6V, -4V540pF @ 100V---40°C ~ 150°C (TJ)Surface MountDie Outline (7-Solder Bar)Die
Product Image EPC2031ENGRTEPCMOSFET NCH 60V 31A DIE500 Minimum: 500Tape & Reel (TR) Alternate PackagingeGaN®ActiveN-ChannelGaNFET (Gallium Nitride)60V31A (Ta)5V2.6 mOhm @ 30A, 5V2.5V @ 15mA17nC @ 5V+6V, -4V1800pF @ 300V---40°C ~ 150°C (TJ)Surface MountDieDie
Product Image EPC2031ENGRTEPCMOSFET NCH 60V 31A DIE1 Minimum: 1Cut Tape (CT) Alternate PackagingeGaN®ActiveN-ChannelGaNFET (Gallium Nitride)60V31A (Ta)5V2.6 mOhm @ 30A, 5V2.5V @ 15mA17nC @ 5V+6V, -4V1800pF @ 300V---40°C ~ 150°C (TJ)Surface MountDieDie